| 1. | Reflection high energy electron diffraction method
反射高能电子绕射法 |
| 2. | Selected area electron diffraction image
选区电子衍射象 |
| 3. | Low energy electron diffraction method
低能电子绕射法 |
| 4. | Low energy electron diffraction
低能电子衍射 |
| 5. | Method of electron diffraction
电子衍射法 |
| 6. | Method of selected area electron diffraction for transmission electron microscopes
透射电子显微镜选区电子衍射分析方法 |
| 7. | Electron diffraction image
电子衍射象 |
| 8. | No5 ： image processing based on the combination of high - resolution electron microscopy and electron diffraction ( invited paper ) , f . h . li , microscopy research and technique , 40 ( 1998 ) 86 - 100
场发射高分辨电子显微镜在揭示原子分辨率晶体缺陷上的应用（特邀论文） ，李方华，科仪新知， 21 ( 1999 ) 8 - 15 |
| 9. | Tem and electron diffraction patterns show that there exist two major forms of nanowires possessing different morphologies and growth directions , which may indicate that different mechanisms predominate in the growth process
产物中主要包括两种类型的si纳米线，二者具有不同的形貌和结构特征，因此它们遵从不同的生长机制。 |
| 10. | The reflection high - energy electron diffraction ( rheed ) was used to monitor the surface of insb in situ during the epitaxial growth , rheed diffraction pattern indicates volmer - weber growth at the very early stage of nucleation
低温insb缓冲层在生长初期显示明显的岛状生长,通过rheed强度振荡的观察,确定低温insb缓冲层的生长速率为0 . 26 m / h 。 |
